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Super flat material could extend life of Moore’s Law

by • February 15, 2016 • No Comments

Researchers may be fending off the demise of Moore’s Law with the assist of a new material that allows for electrons to move of point A to point B faster. Engineers at the University of Utah found a new kind of flat semiconducting material created of tin monoxide that is just one-atom thick, enabling electrical charges to pass through it faster than silicon or other 3D materials.

Charges traveling through conventional electronic devices bounce around in all directions when traveling through transistors and other components consisting of layers of silicon on a glass substrate. Engineers have just not long ago begun to work with 2D materials like graphene, molybdenum disulfide and borophene, that force electrons to “just move in one layer so it is much faster,” says professor Ashutosh Tiwari, who led the research.

Tiwari says the new material fills an significant gap in speeding up electronics for the reason, unlike graphene and other near atom-thin materials, it allows for both negative electrons and positive charges – or “holes” – to move through it. This has led the team to describe the material as the initially stable P-type 2D semiconductor material in existence.

“Now we have equitething,” he says. “Now things can move forward much additional quickly.”

The team believes the material can enable the make of transistors that are more compact and faster than those already in use, major to computers and mobile devices that are 100 times faster than current devices and run cooler and additional efficiently, thereby extending battery life.

“The field is quite hot right now, and individuals are quite interested in it,” Tiwari says. “So in two or three years we should see at very least a few prototype device.”

The research was published this week in the journal, Advanced Electronic Materials.

Source: University of Utah

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